| 10:00-10:15 |
B. Lemaitre |
Welcome and Call to order |
| |
|
RF MOSFET Modeling |
| 10:15-10:45 |
D. Schreurs |
NNMS
- Characterization and Modeling |
|
|
Non-linear models of microwave
devices are commonly based on DC, low-frequency C-V and S-parameter measurements.
However, the recent development of new measurement set-ups, which are oriented
towards VECTORIAL large-signal characterization, has initiated the development
of new techniques to enhance the ease and accuracy of non-linear transistor
model validation and extraction. This presentation focuses on the Agilent's
Non-linear Network Measurement System (NNMS) and presents an overview of
the applicability of this novel type of measurements to RF MOSFET
modelling. |
| 10:45-11:15 |
G. Knoblinger |
RF-CMOS
Noise: Modeling and Extraction |
|
|
Because the performance
of typical RF-CMOS applications (LNA, ...) is dominated by the noise performance
of the MOS transistors, an exact noise modeling of these devices is very
important. A method for the extraction of the noise sources of the MOS
transistor (drain current noise, gate noise and correlation coefficient
between these two sources) where all additional parasitic noise sources
in the small signal equivalent circuit are considered, will be presented.
We also will present a new model for the thermal channel noise of deep
submicron CMOS transistors. |
| 11:15-11:30 |
|
Coffee break |
| |
|
BSIM4 Model |
| 11:30-12:00 |
J. Assenmacher |
Modeling and Parameter Extraction Experiences
with BSIM4 |
|
|
Modeling of halo/pocket
implanted MOSFETs, i.e. parameter extraction of drain-induced threshold
voltage shift (DITS) and output resistance degradation in long channel
devices. Improved modeling of the moderate inversion region and reverse
short channel effect (RSCE) for higher body bias. Discussion of the new
mobility model. Modeling of quantum-mechanical effect using the intrinsic
charge thickness capacitance model (CTM). |
| 12:00-13:30 |
|
Lunch |
| 13:30-14:00 |
T. Gneiting |
Model
Parameter Extraction Strategy for the BSIM4 Simulation Model |
|
|
The new BSIM4 simulation
model for very deep sub-micron devices from UC Berkeley has roughly 240
parameters. It can be used in a flexible and powerful way to model a large
variety of different MOS technologies. This paper demonstrates a methodology
to determine the parameters based on the model equations directly
from transistor measurements. New data representations, like Vth=f(L,Temperature,
etc.) are generated to concentrate the huge amount of I-V curves of up
to 20 measured transistors in a more informative format. |
| |
|
University activities and WEB teaching |
| 14:00-14:30 |
W. Kuzmicz |
Extraction
of Compact Model Parameters From Results of 2D Device Simulation |
|
|
This talk demonstrates a
technique of extraction of parameters of a compact MOS model (BSIM3v3)
from the results of process and device simulation. This technique is fast
enough to be applicable in statistical (Monte Carlo) process/device/circuit
simulation. Application to a real industrial CMOS process is presented
and comparison with experimental transistor characteristics provided. |
| 14:30-15:00 |
H. Khakzar |
Global
University of Technology |
|
|
- Motivation
- Why? At the right time and space
- The enabling Technology
- Exploding internet
- The evolving geopolitical conditions
- Dialog 'Among Civilizations
- Our resources
|
| 15:00-15:15 |
|
Coffee break |
| |
|
Guest presentation |
| 15:15-15:30 |
D. Foty |
Introduction
of the FSA Fabless Semiconductor Association, Modeling Committee |
|
|
The Fabless Semiconductor
Association (FSA) was founded in 1994 to serve as the leading voice and
key-enabler for the fabless semiconductor industry. The association
began with 40 founding members and has grown to 300 members, whose success
can be measured in the dramatic evolution of the attitude toward fabless
- from criticized, to respected, to preferred.
Today, the fabless-foundry
business model represents the most dynamic, advanced, and productive cutting-edge
of the North American semiconductor industry.This brief presentation
reviews the important aspects of the fabless industry in the United States.
It also describes the activities of the Modeling Subcommittee in promoting
the quality of models used by fabless companies and in providing general
service to the profession in the semiconductor industry. |
| |
|
Organizational topics |
| 15:30-16:00 |
B. Lemaitre
W. Grabinski |
Panel discussion / next meeting planning
reduction of meeting frequency
or 2 meetings/year ?
organization issues
special modeling meeting, including
new model developments like charge-sheet models, EKV3.0, SP2000?
|
| 16:00 |
|
Adjourn. End of meeting |
